Reaction mechanism studies on atomic layer deposition process of AlF<sub>3</sub>
نویسندگان
چکیده
In this work, the reaction mechanism in atomic layer deposition (ALD) process of AlF3 thin films is studied with situ quartz crystal microbalance and quadrupole mass spectrometer. The depositions are done AlCl3 TiF4 as precursors. Similar to many metal fluoride deposited by ALD, growth rate strongly temperature dependent. addition, at low temperatures, exceptionally high for a traditional ALD process. study, reasons behind these characteristics detailed step-by-step film presented.
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ژورنال
عنوان ژورنال: Journal of vacuum science & technology
سال: 2022
ISSN: ['2327-9877', '0734-211X']
DOI: https://doi.org/10.1116/6.0001624